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TrenchMV TM
Power MOSFET
IXTA80N10T
IXTP80N10T
V DSS
I D25
R DS(on)
=
=
≤
100V
80A
14m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
Fast Intrinsic Diode
G
S
Symbol
Test Conditions
Maximum Ratings
D (Tab)
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
100
100
± 20
± 30
V
V
V
V
TO-220AB (IXTP)
I D25
I DM
I A
E AS
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
80
220
25
400
A
A
A
mJ
G
DS
D (Tab)
P D
dV/dt
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
230
10
W
V/ns
G = Gate
S = Source
D = Drain
Tab = Drain
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
Features
International Standard Packages
T L
T SOLD
M d
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
300
260
1.13 / 10
2.5
3.0
° C
° C
Nm/lb.in.
g
g
175°C Operating Temperature
Avalanche Rated
High Current Handling Capability
Fast Intrinsic Diode
Low R DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Applications
BV DSS
V GS = 0V, I D = 250 μ A
105
V
Automotive
- Motor Drives
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 100 μ A
V GS = ± 20V, V DS = 0V
V DS = 105V, V GS = 0V
T J = 150 ° C
2.5
5.0
± 200
5
150
V
nA
μ A
μ A
- DC/DC Conversion
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-Line UPS
Primary Switch for 24V and 48V
Systems
R DS(on)
V GS = 10V, I D = 25A, Note 1 & 2
14 m Ω
High Current Switching Applications
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
? 2009 IXYS CORPORATION, All Rights Reserved
DS99648A(11/09)
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